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Same model may have multiple batches, images only for reference.
IRFH5104TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5104TRPBF

Part No IRFH5104TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 24A PQFN
Datasheet
IRFH5104TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 3120pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 114W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-VQFN Exposed Pad
Win Source Part Number 1046871-IRFH5104TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH5104TRPBF CAD Model

Description

The Infineon Technologies IRFH5104TRPBF is an N-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 24A.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 24A
  • Maximum Power Dissipation: 3.6W (Ta) and 114W (Tc)
  • Maximum Rds On: 3.5 mOhm @ 50A and 10V
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Gate Charge: 80nC @ 10V
  • Package: PQFN (5x6) package with dimensions of 8-VQFN Exposed Pad
  • Suitable for use in: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8016 $60.1200
180+ $0.6584 $118.5120
275+ $0.6376 $175.3400
375+ $0.6168 $231.3000
485+ $0.5960 $289.0600
650+ $0.5348 $347.6200
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MOQ: 75 pcs
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