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Same model may have multiple batches, images only for reference.
IRFH5250TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5250TRPBF

Part No IRFH5250TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 25V 45A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 45A PQFN
Datasheet
IRFH5250TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 45A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 150μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 7174pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 160W (Tc)
Maximum Rds On at Id,Vgs 1.15 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 069476-IRFH5250TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFH5250
Introduction Date September 18, 2009
ECCN EAR99
Country of Origin China
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRFH5250TRPBF CAD Model

Description

The Infineon Technologies IRFH5250TRPBF is a MOSFET with N-channel polarity.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 45A @ 25°C and 100A @ Tc
  • Maximum Power Dissipation: 3.6W (Ta) and 160W (Tc)
  • Package: PQFN (5x6)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 1.15 mOhm @ 50A, 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2222 $61.1100
120+ $1.0029 $120.3480
180+ $0.9716 $174.8880
250+ $0.9402 $235.0500
320+ $0.9089 $290.8480
430+ $0.8149 $350.4070
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Availability: 15,000 pieces
MOQ: 50 pcs
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