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IRF6798MTR1PBF

Part No IRF6798MTR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 37A DIRECTFET-MX
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 37A (Ta), 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 150μA
Max Gate Charge 75nC @ 4.5V
Max Input Capacitance 6560pF @ 13V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Maximum Rds On at Id,Vgs 1.3 mOhm @ 37A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 1046571-IRF6798MTR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6798MTR1PBF CAD Model

Description

The IRF6798MTR1PBF is a N-Channel MOSFET that is designed for use in industrial applications. The device is mounted SMD (SMT) and comes in a DIRECTFET MX case/package.

  • Mounting: SMD (SMT)
  • Case/Package: DIRECTFET MX
  • Technology: MOSFET
  • FET Feature: Schottky Diode (Body)
  • Polarity: N-Channel
  • Power Dissipation (max): 2.8W (Ta), 78W (Tc)
  • Status: Obsolete (EOL)
  • Operating Temperature: -40°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 37A (Ta), 197A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 150μA
  • Max Gate Charge: 75nC @ 4.5V
  • Max Input Capacitance: 6560pF @ 13V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 1.3 mOhm @ 37A, 10V
  • Supply and Demand Status: Balanced
  • Manufacturer: Infineon Technologies

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