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Same model may have multiple batches, images only for reference.
IRFH5406TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5406TR2PBF

Part No IRFH5406TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 40A 5X6 PQFN
Datasheet
IRFH5406TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1256pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 46W (Tc)
Maximum Rds On at Id,Vgs 14.4 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 140022-IRFH5406TR2PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFH5406TR2PBF CAD Model

Description

The Infineon Technologies IRFH5406TR2PBF is a high-performance N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 11A @ 25°C
  • Package: PQFN (5x6)
  • Maximum Power Dissipation: 3.6W (Ta), 46W (Tc)
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1880 $53.4600
90+ $1.1128 $100.1520
140+ $1.0752 $150.5280
200+ $1.0000 $200.0000
260+ $0.9625 $250.2500
325+ $0.9249 $300.5925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,580 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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