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IRFH7107TRPBF Real Image IRFH7107TRPBF Real Image1 IRFH7107TRPBF Real Image2
Same model may have multiple batches, images only for reference.
IRFH7107TRPBF Real Image IRFH7107TRPBF Real Image1 IRFH7107TRPBF Real Image2
IRFH7107TRPBF Real Image IRFH7107TRPBF Real Image1 IRFH7107TRPBF Real Image2
Same model may have multiple batches, images only for reference.

IRFH7107TRPBF

Part No IRFH7107TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 14A 8PQFN
Datasheet
IRFH7107TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 14A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 3110pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 1046886-IRFH7107TRPBF
Family Name IRFH7107
Introduction Date May 04, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFH7107TRPBF CAD Model

Description

The Infineon Technologies MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a high-performance electronic component used in a variety of applications.

  • Type: Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
  • Drain-Source Breakdown Voltage: 75V
  • Rds On @ Id,Vgs: 8.5 mOhm @ 45A, 10V
  • Channel: N-channel
  • Category: discrete semiconductor products
  • Maximum Power Dissipation: 3.6W (Ta), 104W (Tc)
  • Package: 8-PQFN (5x6)
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Gate Charge: 72nC @ 10V
  • Market Status: popular choice among electronic component engineers due to its high popularity and sufficient supply and demand status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0374 $50.9350
60+ $1.6717 $100.3020
93+ $1.6195 $150.6135
128+ $1.5672 $200.6016
166+ $1.5150 $251.4900
221+ $1.3583 $300.1843
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,240 pieces
MOQ: 25 pcs
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