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Same model may have multiple batches, images only for reference.
IRFH8316TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH8316TRPBF

Part No IRFH8316TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 27A PQFN5X6
Datasheet
IRFH8316TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 27A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 50μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 3610pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 59W (Tc)
Maximum Rds On at Id,Vgs 2.95 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 1046897-IRFH8316TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH8316TRPBF CAD Model

Description

The Infineon Technologies 1046897-IRFH8316TRPBF is a MOSFET Polarity N-Channel component that is active and is supplied in the 8-PQFN (5x6) package.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 27A (Ta), 50A (Tc)
  • Gate-Source Threshold Voltage: 2.2V @ 50μA
  • Max Gate Charge: 59nC @ 10V
  • Max Input Capacitance: 3610pF @ 10V
  • Maximum Rds On @ Id, Vgs: 2.95 mOhm @ 20A, 10V

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