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Same model may have multiple batches, images only for reference.
IRFH8324TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFH8324TR2PBF

Part No IRFH8324TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 18A 5X6 PQFN
Datasheet
IRFH8324TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 23A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 50μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 2380pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 54W (Tc)
Maximum Rds On at Id,Vgs 4.1 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 128709-IRFH8324TR2PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFH8324TR2PBF CAD Model

Description

The Infineon Technologies IRFH8324TR2PBF MOSFET is a high-performance N-channel transistor that is ideal for use in a wide range of electronic applications.

  • Maximum Power Dissipation: 3.6W (Ta), 54W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 23A (Ta), 90A (Tc)
  • Gate-Source Threshold Voltage: 2.35V @ 50μA
  • Maximum Gate Charge: 31nC @ 10V
  • Package: PQFN (5x6)
  • Maximum Input Capacitance: 2380pF @ 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7357 $58.8560
195+ $0.6036 $117.7020
300+ $0.5848 $175.4400
410+ $0.5660 $232.0600
530+ $0.5470 $289.9100
710+ $0.4904 $348.1840
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Availability: 9,900 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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