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Same model may have multiple batches, images only for reference.
IRFH8325TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH8325TRPBF

Part No IRFH8325TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 82A 5X6 PQFN
Datasheet
IRFH8325TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 50μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 2487pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 54W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 119710-IRFH8325TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH8325TRPBF CAD Model

Description

The Infineon Technologies 119710-IRFH8325TRPBF is a high-performance N-Channel MOSFET designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 21A (Ta), 82A (Tc)
  • Gate-Source Threshold Voltage: 2.35V @ 50μA
  • Maximum Gate Charge: 32nC @ 10V
  • Maximum Rds On @ Id,Vgs: 5 mOhm @ 20A, 10V
  • Package: PQFN (5x6)
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2951 $59.0200
480+ $0.2422 $116.2560
740+ $0.2346 $173.6040
1,020+ $0.2271 $231.6420
1,320+ $0.2195 $289.7400
1,765+ $0.1968 $347.3520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,290 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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