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IRFH8330TR2PBF

Part No IRFH8330TR2PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 30V 14A 5X6 PQFN
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 17A, 56A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 6.6mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.35V at 25μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1450pF at 25V
Power Dissipation (Maximum) 3.3W, 35W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PQFN (5x6)
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 1
MSL Level 3 (168 Hours)
Win Source Part Number 710516-IRFH8330TR2PBF
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFH8330TR2PBF CAD Model

Description

The Infineon Technologies IRFH8330TR2PBF is an N-channel MOSFET transistor with a PQFN (5x6) package.

  • Maximum Continuous Drain Current: 17A
  • Maximum Power Dissipation: 3.3W
  • Maximum Voltage: 30V
  • Drive Voltage: 4.5V, 10V
  • Popularity: Low
  • Supply and Demand Status: Limited
  • Product Status: Obsolete
  • Temperature Range: -55°C to 150°C
  • Gate Source Voltage (th): 2.35V @ 25μA
  • Gate Charge (Qg): 20nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9090 $59.0850
155+ $0.7461 $115.6455
240+ $0.7219 $173.2560
335+ $0.6988 $234.0980
430+ $0.6757 $290.5510
575+ $0.6064 $348.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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