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IRFH8337TRPBF

Part No IRFH8337TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 5X6 PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 790pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.2W (Ta), 27W (Tc)
Maximum Rds On at Id,Vgs 12.8 mOhm @ 16.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 017604-IRFH8337TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFH8337TRPBF CAD Model

Description

The Infineon Technologies IRFH8337TRPBF is a N-channel MOSFET transistor that is designed for use in power management and industrial applications.

  • Maximum Power Dissipation: 3.2W @ Ta and 27W @ Tc
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12A @ 25°C and 35A @ Tc
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 10nC @ 10V
  • Maximum Input Capacitance: 790pF @ 10V
  • Maximum Rds On: 12.8 mOhm @ 16.2A and 10V
  • Package: PQFN (5x6)
  • Mounting: SMD (SMT)
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4043 $58.6235
350+ $0.3315 $116.0250
540+ $0.3211 $173.3940
745+ $0.3107 $231.4715
965+ $0.3003 $289.7895
1,290+ $0.2691 $347.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,800 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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