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IRFHS8242TR2PBF

Part No IRFHS8242TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 9.9A PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 9.9A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 10.4nC @ 10V
Max Input Capacitance 653pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 8.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-PQFN (2x2)
Dimension 6-PowerVDFN
Win Source Part Number 1046917-IRFHS8242TR2PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFHS8242TR2PBF CAD Model

Description

The Infineon Technologies 1046917-IRFHS8242TR2PBF is an N-channel MOSFET with a drain-source breakdown voltage of 25V and a continuous drain current of 9.9A @ Ta and 21A @ Tc @ 25°C.

  • FET Type: N-Channel
  • Voltage - Drain Source Breakdown (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A @ Ta, 21A @ Tc
  • Power Dissipation - Max: 2.1W @ Ta
  • Case/Package: 6-PQFN (2x2)
  • Mounting Type: Surface Mount
  • Vgs(th) (Max) @ Id: 2.35V @ 25μA
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 8.5A, 10V
  • Lifecycle Status: Obsolete(EOL)
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.3026 $59.0070
470+ $0.2483 $116.7010
720+ $0.2414 $173.8080
995+ $0.2333 $232.1335
1,285+ $0.2252 $289.3820
1,715+ $0.2021 $346.6015
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,500 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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