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Same model may have multiple batches, images only for reference.
IRFI1010NPBF Real Image
Same model may have multiple batches, images only for reference.

IRFI1010NPBF

Part No IRFI1010NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 49A TO220FP
Datasheet
IRFI1010NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 58W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 069482-IRFI1010NPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI1010NPBF CAD Model

Description

The Infineon Technologies IRFI1010NPBF is an N-Channel MOSFET with a maximum power dissipation of 58W (Tc).

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current (Tc): 49A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 130nC @ 10V
  • Maximum Input Capacitance: 2900pF @ 25V
  • Maximum Rds On at Id,Vgs: 12 mOhm @ 26A, 10V
  • Package: TO-220AB Full-Pak
  • Temperature Range: -55°C to 150°C (TJ)
  • Category: Discrete Semiconductor Products
  • Market Status: medium popularity rating. and a limited supply and demand status.

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