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Same model may have multiple batches, images only for reference.
IRFI540NPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFI540NPBF

Part No IRFI540NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 20A TO220FP
Datasheet
IRFI540NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 94nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 54W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 069486-IRFI540NPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI540NPBF CAD Model

Description

The Infineon Technologies IRFI540NPBF is a N-channel MOSFET with a drain-source breakdown voltage of 100V and a maximum continuous drain current of 20A (Tc).

  • Power Dissipation: 54W (Tc)
  • Maximum Rds On: 52 mOhm @ 11A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 94nC @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1400pF @ 25V
  • Common Usage: commonly used in discrete semiconductor products
  • Popularity: medium popularity

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0009 $50.0450
125+ $0.8213 $102.6625
190+ $0.7956 $151.1640
260+ $0.7700 $200.2000
340+ $0.7443 $253.0620
450+ $0.6673 $300.2850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,810 pieces
MOQ: 50 pcs
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