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Same model may have multiple batches, images only for reference.
IRFI7446GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFI7446GPBF

Part No IRFI7446GPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A
Datasheet
IRFI7446GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 100μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 3199pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40.5W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 48A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 1046943-IRFI7446GPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFI7446GPBF CAD Model

Description

The Infineon Technologies IRFI7446GPBF is an N-Channel MOSFET that is part of the Discrete Semiconductor Products category.

  • Package: TO-220AB Full-Pak
  • Mounting: Through Hole technology
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 80A (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 100μA
  • Maximum Gate Charge: 90nC @ 10V
  • Maximum Input Capacitance: 3199pF @ 25V
  • Maximum Rds On @ Id,Vgs: 3.3 mOhm @ 48A, 10V

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