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2DC2412R

Part No 2DC2412R
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Win Source Part Number 1123546-2DC2412R
Manufacturer Homepage www.diodes.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2DC2412R CAD Model

Description

Introducing the 2DC2412R NPN Transistor from Diodes Incorporated

The 2DC2412R is a high-performance NPN bipolar junction transistor (BJT) designed and manufactured by the renowned semiconductor company, Diodes Incorporated. This versatile transistor is crafted for applications that demand reliable switching and amplification, with a focus on delivering consistent performance in a compact package.

Key Features of the 2DC2412R:

  • High Current Gain Bandwidth Product: The 2DC2412R offers an excellent frequency response, making it suitable for amplifier circuits that require high-speed operation.
  • Low Collector-Emitter Saturation Voltage: This feature ensures minimal voltage drop during the saturation state, leading to increased efficiency and reduced power loss.
  • High Collector Current: With the ability to handle a substantial collector current, the 2DC2412R is ideal for driving loads that require higher current levels.
  • Compact SOT-23 Package: The small surface-mount package allows for efficient use of PCB space, making it a great choice for space-constrained applications.
  • RoHS Compliant: In adherence to environmental standards, the 2DC2412R is RoHS compliant, ensuring it meets the latest regulations for hazardous substance control.

Applications:

The 2DC2412R can be utilized in a wide array of electronic circuits, including but not limited to:

  • Switching applications
  • Signal amplification
  • Audio amplifiers
  • Driver stages in Hi-Fi amplifiers
  • Power management solutions
  • Control systems

Technical Specifications:

Parameter Value Collector-Base Voltage (VCBO) 50V Collector-Emitter Voltage (VCEO) 45V Emitter-Base Voltage (VEBO) 5V Collector Current (IC) 100mA Power Dissipation (PD) 350mW DC Current Gain (hFE) 200 to 400

Whether you're designing a new circuit or looking for a reliable component for your existing design, the 2DC2412R from Diodes Incorporated is a choice that won't disappoint. With its robust features and compliance with industry standards, it stands as a testament to Diodes Incorporated's commitment to quality and performance.

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