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Same model may have multiple batches, images only for reference.
IRFI7536GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFI7536GPBF

Part No IRFI7536GPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 86A TO220
Datasheet
IRFI7536GPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 48 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Standard Package 2,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 746302-IRFI7536GPBF
Ultra Librarian 3D Model Ultra Librarian IRFI7536GPBF CAD Model

Description

The 746302-IRFI7536GPBF is a N-channel MOSFET transistor from the HEXFET™ series.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 86A @ 25°C
  • Rds On (Max): 3.4mOhm @ 75A, 10V
  • Gate Charge (Qg): 195nC @ 10V
  • Input Capacitance (Ciss): 6600pF @ 48V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature: -55°C to 175°C
  • Power Dissipation: 75W
  • Package Type: TO-220-3 Full Pack
  • Mounting: Through hole
  • Manufacturer: Infineon Technologies
  • Product Status: Obsolete

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