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Same model may have multiple batches, images only for reference.
IRFIZ24NPBF Real Image
Same model may have multiple batches, images only for reference.

IRFIZ24NPBF

Part No IRFIZ24NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 14A TO220FP
Datasheet
IRFIZ24NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 29W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 069493-IRFIZ24NPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFIZ24NPBF CAD Model

Description

The Infineon Technologies IRFIZ24NPBF is a N-channel MOSFET used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 14A @ Tc
  • Maximum Rds On: 70 mOhm @ 7.8A and 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 370pF @ 25V
  • Package: TO-220AB Full-Pak
  • Power Dissipation: 29W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8050 $60.3750
175+ $0.6607 $115.6225
275+ $0.6399 $175.9725
375+ $0.6191 $232.1625
485+ $0.5983 $290.1755
650+ $0.5371 $349.1150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,800 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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