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IRFIZ34E

Part No IRFIZ34E
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A) | MOSFET N-CH 60V 21A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 21A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 42mOhm at 11A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 34nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 700pF at 25V
Power Dissipation (Maximum) 37W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB Full-Pak
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187702-IRFIZ34E
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFIZ34E CAD Model

Description

The IRFIZ34E is an N-channel MOSFET transistor from Infineon Technologies.

  • Package: TO-220AB Full-Pak
  • Drain-Source Breakdown Voltage (Vds): 60V
  • Maximum Continuous Drain Current (Id): 21A
  • Maximum On-Resistance (Rds On) @ Id, Vgs: 42mOhm @ 11A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge (Qg): 34nC @ 10V
  • Input Capacitance (Ciss) @ 25Vds: 700pF
  • Operating Temperature: -55°C to 175°C
  • Ideal for: Use in power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,280 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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