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Same model may have multiple batches, images only for reference.
IRFIZ48NPBF Real Image
Same model may have multiple batches, images only for reference.

IRFIZ48NPBF

Part No IRFIZ48NPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description POWER MOSFET | MOSFET N-CH 55V 40A TO220FP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 40A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 16mOhm at 22A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 89nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 25V
Power Dissipation (Maximum) 54W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB Full-Pak
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 2,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187710-IRFIZ48NPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFIZ48NPBF CAD Model

Description

The IRFIZ48NPBF is a MOSFET transistor that is designed for use in discrete semiconductor products from Infineon Technologies.

  • Mounting Type: Through-Hole
  • Package: TO-220AB Full-Pak
  • Channel Type: N-Channel
  • Gate-Source Voltage (Maximum): ±20V
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 40A
  • Maximum Rds on: 16mOhm @ 22A, 10V
  • Maximum Gate-Source Voltage(th): 4V @ 250µA
  • Maximum Gate Charge (Qg): 89nC @ 10V
  • Maximum Input Capacitance (Ciss): 1900pF @ 25V
  • Operating Temperature: -55°C to 175°C
  • Maximum Power Dissipation: 54W
  • Supply and Demand Status: Limited

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