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Same model may have multiple batches, images only for reference.
IRFL4315PBF Real Image
Same model may have multiple batches, images only for reference.

IRFL4315PBF

Part No IRFL4315PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 150V 2.6A SOT223
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 2.6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 185mOhm at 1.6A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 19nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 420pF at 25V
Power Dissipation (Maximum) 2.8W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-223
Manufacturer Package TO-261-4, TO-261AA
Manufacturer Pack Quantity 1,760
MSL Level 1 (Unlimited)
Win Source Part Number 731459-IRFL4315PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFL4315PBF CAD Model

Description

The Infineon Technologies IRFL4315PBF is an N-channel MOSFET with a drain-source breakdown voltage of 150V and a maximum continuous drain current of 2.6A.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 150V
  • Maximum Continuous Drain Current: 2.6A
  • Rds On (Maximum): 185mOhm @ 1.6A, 10V
  • Package: SMD SOT-223
  • Operating Temperature: -55°C to 150°C
  • Applications: Power Supplies, Motor Control, High Voltage Applications
  • Package: Tube
  • Manufacturer Pack Quantity: 1,760

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Quantity Unit Price Ext. Price
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51+ $1.9980 $101.8980
78+ $1.9305 $150.5790
112+ $1.7955 $201.0960
145+ $1.7280 $250.5600
181+ $1.6605 $300.5505
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MOQ: 24 pcs
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