The ON Semiconductor 2SB1118T-TD is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor offers excellent power dissipation, high current capacity, and robust thermal performance, making it suitable for amplification and switching applications.

Key Features

• Device Type: PNP Bipolar Transistor
• Collector-Emitter Voltage (VCEO): -80V, providing a good margin for high-voltage applications.
• Collector Current (IC): Up to -1A, which allows for handling significant current loads.
• Power Dissipation (Pd): 900mW, ensuring reliable operation under high power conditions.
• DC Current Gain (hFE): High hFE rating, indicating efficient current amplification capabilities.
• Package: TO-252 (DPAK) surface-mount package, ideal for compact PCB layouts.

Applications

The 2SB1118T-TD is designed to meet the requirements of various electronic circuits and can be used in:

• Power management circuits
• Audio amplifiers
• Signal processing
• Switching regulators
• DC-DC converters
• Motor control circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability. The 2SB1118T-TD transistor is produced with stringent quality control measures and is designed to meet or exceed industry standards for performance and reliability. It is a robust component that ensures long-term stability and performance in your electronic designs.

Environmental Compliance

In keeping with global environmental standards, the 2SB1118T-TD is compliant with RoHS (Restriction of Hazardous Substances) directives, which means it is free from harmful materials such as lead, mercury, and cadmium. This compliance ensures that the product is safe for both the environment and end-users.