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IXTT1N450HV

Name: IXTT1N450HV
Brand: IXYS
SKU: 608610
Availability: InStock
Rating: 4.91 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	IXTT1N450HV
Manufacturer	IXYS
Catalog	FETs - Single
Description	High Voltage Power MOSFET \| MOSFET N-CH 4500V 1A TO268
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	4500V
Id - Continuous Drain Current	1A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	85Ohm at 50mA, 10V
Gate Source Voltage(th) (Maximum) at Id	6.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	40nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	1730pF at 25V
Power Dissipation (Maximum)	520W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	TO-268
Manufacturer Package	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Manufacturer Pack Quantity	30
MSL Level	1 (Unlimited)
Win Source Part Number	1191298-IXTT1N450HV
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXTT1N450HV CAD Model

Alternative Products

Description

The IXYS IXTT1N450HV is an N-channel MOSFET with a drain-source breakdown voltage of 4500V and a continuous drain current of 1A.

Rds On (Max): 85Ohm @ 50mA, 10V
Gate-Source Voltage(th): 6.5V @ 250μA
Gate Charge (Qg): 40nC @ 10V
Input Capacitance (Ciss): 1730pF @ 25V
Transistor Polarity: N-Channel
Mounting Style: SMD
Packaging: Tube
Technology: MOSFET
Supplier Device Package: TO-268
Operating Temperature: -55°C to 150°C
Manufacturer Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Power Dissipation: 520W
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)

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IXTT1N450HV

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