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Same model may have multiple batches, images only for reference.
IRFM360
Same model may have multiple batches, images only for reference.

IRFM360

Part No IRFM360
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 14 A
Drain to Source Breakdown Voltage 400 V
Drain to Source Resistance 200 mΩ
Drain to Source Voltage (Vdss) 400 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Max Power Dissipation 250 W
Min Operating Temperature -55 °C
Mount Through Hole
Nominal Vgs 4 V
Number of Elements 1
Number of Pins 3
On-State Resistance 200 mΩ
Power Dissipation 250 W
Radiation Hardening No
REACH SVHC No SVHC
RoHS Non-Compliant
Win Source Part Number 1065566-IRFM360
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFM360 CAD Model

Description

The IRFM360 is a N-channel MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage: 400 V
  • Continuous Drain Current: 14 A
  • Rds On (Max) @ Id, Vgs: 200 mΩ @ 3.4A, 10V
  • Gate to Source Voltage (Vgs): 20 V
  • Nominal Vgs: 4 V
  • Mounting: Through hole
  • Maximum Power Dissipation: 250 W
  • Popularity: Low
  • Used in: Transistors - FETs, MOSFETs - RF

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