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IRFP044NPBF

Part No IRFP044NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 53A TO-247AC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 61nC @ 10V
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 20 mOhm @ 29A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 132845-IRFP044NPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFP044NPBF CAD Model

Description

The Infineon Technologies IRFP044NPBF is a MOSFET technology N-Channel polarity transistor designed for discrete semiconductor products.

  • Maximum Power Dissipation: 120W (Tc)
  • Continuous Drain Current: 53A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 61nC @ 10V
  • Package: TO-247AC
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.0075 $64.0300
8+ $13.1344 $105.0752
12+ $12.7239 $152.6868
17+ $12.3135 $209.3295
22+ $11.9030 $261.8660
29+ $10.6717 $309.4793
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,110 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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