The Infineon Technologies IRFP4229PBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 250V and a maximum continuous drain current of 44A at 25°C.

• Drain-Source Breakdown Voltage: 250V
• Continuous Drain Current: 44A @ 25°C
• Maximum Power Dissipation: 310W
• Maximum Gate Charge: 110nC @ 10V
• Mounting Type: Through Hole
• Case: TO-247AC
• Maximum Rds On @ Id, Vgs: 46 mOhm @ 26A, 10V

The IRFP4229PBF is ideal for use in applications such as power supplies, motor control, and DC-DC converters. With its low Rds On value of 46 mOhm at 26A and 10V, this MOSFET transistor is a reliable and efficient choice for your electronic projects.