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Same model may have multiple batches, images only for reference.
IRFP4232PBF Real Image
Same model may have multiple batches, images only for reference.

IRFP4232PBF

Part No IRFP4232PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 60A TO-247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 7290pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 430W (Tc)
Maximum Rds On at Id,Vgs 35.7 mOhm @ 42A, 10V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 1046992-IRFP4232PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFP4232PBF CAD Model

Description

The Infineon Technologies IRFP4232PBF is a N-channel MOSFET transistor.

  • Channel Type: N-Channel
  • Power Dissipation: 430W (Tc)
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 60A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 35.7 mOhm @ 42A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Gate Charge (Max): 240nC @ 10V
  • Input Capacitance (Max): 7290pF @ 25V
  • Gate-Source Voltage (Max): ±20V
  • Package: TO-247AC
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Supply: Limited

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