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IRFPS3810PBF

Part No IRFPS3810PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170A SUPER247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 390nC @ 10V
Max Input Capacitance 6790pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 580W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package SUPER-247 (TO-274AA)
Dimension TO-274AA
Win Source Part Number 017649-IRFPS3810PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFPS3810PBF CAD Model

Description

The Infineon Technologies IRFPS3810PBF MOSFET is a high-performance N-channel transistor that is ideal for use in a wide range of electronic applications.

  • Maximum Power Dissipation: 580W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current: 170A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 390nC @ 10V
  • Package: SUPER-247 (TO-274AA)
  • Maximum Input Capacitance: 6790pF @ 25V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.4445 $57.7780
9+ $11.8519 $106.6671
14+ $11.4815 $160.7410
18+ $11.1112 $200.0016
24+ $10.7408 $257.7792
32+ $9.6297 $308.1504
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Availability: 1,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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