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Same model may have multiple batches, images only for reference.
IRFR1010ZTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR1010ZTRPBF

Part No IRFR1010ZTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
IRFR1010ZTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 60647-IRFR1010ZTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR1010ZTRPBF CAD Model

Description

The Infineon Technologies IRFR1010ZTRPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 42A at 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 42A @ 25°C
  • Maximum Power Dissipation: 140W (Tc)
  • Maximum Rds On: 7.5 mOhm @ 42A and 10V
  • Package: D-Pak
  • Mounting: SMD (SMT)
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Maximum Gate Charge: 95nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8062 $52.4030
155+ $0.6615 $102.5325
235+ $0.6408 $150.5880
325+ $0.6202 $201.5650
420+ $0.5995 $251.7900
560+ $0.5375 $301.0000
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Availability: 20,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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