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IRFR1018ETRPBF

Part No IRFR1018ETRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 56A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 2290pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 47A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 001270-IRFR1018ETRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFR1018E
Introduction Date February 28, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRFR1018ETRPBF CAD Model

Description

The Infineon Technologies 001270-IRFR1018ETRPBF is a N-channel MOSFET that features a drain-source breakdown voltage of 60V and a continuous drain current of 56A at 25°C.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 56A @ 25°C
  • Maximum Rds On: 8.4 mOhm @ 47A, 10V
  • Package: D-Pak
  • Maximum Gate-Source Voltage: ±20V
  • Power Dissipation: 110W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0264 $51.3200
120+ $0.8422 $101.0640
185+ $0.8158 $150.9230
255+ $0.7895 $201.3225
330+ $0.7632 $251.8560
440+ $0.6843 $301.0920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,690 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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