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IRFR1205TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR1205TRLPBF

Part No IRFR1205TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 44A DPAK
Datasheet
IRFR1205TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 040732-IRFR1205TRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR1205TRLPBF CAD Model

Description

The Infineon Technologies 040732-IRFR1205TRLPBF is a N-Channel MOSFET transistor with a Drain-Source Breakdown Voltage of 55V and Continuous Drain Current of 44A at 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 44A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 27 mOhm @ 26A and 10V
  • Max Gate Charge: 65nC @ 10V
  • Max Input Capacitance: 1300pF @ 25V
  • Package: D-Pak
  • Power Dissipation: 107W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9780 $58.6800
140+ $0.8025 $112.3500
220+ $0.7774 $171.0280
300+ $0.7523 $225.6900
390+ $0.7272 $283.6080
520+ $0.6520 $339.0400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,930 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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