The Infineon Technologies IRFR120NPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a maximum continuous drain current of 9.4A at 25°C.

• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current: 9.4A @ 25°C
• Maximum Power Dissipation: 48W
• Maximum Gate Charge: 25nC @ 10V
• Mounting Type: Surface Mount
• Case: D-Pak
• Maximum Rds On: 210 mOhm @ 5.6A, 10V

The IRFR120NPBF is ideal for use in applications such as power supplies, motor control, and DC-DC converters. With its low Rds On value of 210 mOhm at 5.6A and 10V, this MOSFET transistor is a reliable and efficient choice for your electronic projects.