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IRFR120NTRLPBF

Part No IRFR120NTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9.4A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 330pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 210 mOhm @ 5.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 069524-IRFR120NTRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR120NTRLPBF CAD Model

Description

The Infineon Technologies IRFR120NTRLPBF is a N-channel MOSFET transistor, designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 9.4A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 330pF @ 25V
  • Maximum Rds On @ Id,Vgs: 210 mOhm @ 5.6A, 10V
  • Case: D-Pak
  • Mounting Type: Surface-Mount Technology (SMT)
  • Power Dissipation: 48W @ Tc
  • Operating Temperature: -55°C to 175°C (TJ)

in the open market. The supply and demand status of this transistor is limited.

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.1769 $50.4165
605+ $0.1657 $100.2485
940+ $0.1601 $150.4940
1,345+ $0.1489 $200.2705
1,745+ $0.1433 $250.0585
2,180+ $0.1377 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 95,240 pieces
MOQ: 285 pcs
Order Increment : 1 pcs
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