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Same model may have multiple batches, images only for reference.
IRFR120ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR120ZPBF

Part No IRFR120ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 8.7A DPAK
Datasheet
IRFR120ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 310pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 5.2A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047021-IRFR120ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR120ZPBF CAD Model

Description

The IRFR120ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 8.7A @ 25°C
  • Rds On: 190 mOhm @ 5.2A and 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 10nC @ 10V
  • Input Capacitance: 310pF @ 25V
  • Maximum Operating Temperature: 175°C
  • Package: D-Pak

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