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IRFR12N25DTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR12N25DTRPBF

Part No IRFR12N25DTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 14A DPAK
Datasheet
IRFR12N25DTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 810pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 260 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 093098-IRFR12N25DTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian IRFR12N25DTRPBF CAD Model

Description

The Infineon Technologies IRFR12N25DTRPBF is a N-Channel MOSFET type discrete semiconductor product with a maximum Drain-Source Breakdown Voltage of 250V and Continuous Drain Current at 25°C of 14A (Tc).

  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 14A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Rds On @ Id,Vgs: 260 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Maximum Power Dissipation: 144W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.7321 $65.8890
220+ $0.6002 $132.0440
335+ $0.5822 $195.0370
460+ $0.5627 $258.8420
595+ $0.5447 $324.0965
800+ $0.4876 $390.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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