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Same model may have multiple batches, images only for reference.
IRFR13N20DTRLP Real Image
Same model may have multiple batches, images only for reference.

IRFR13N20DTRLP

Part No IRFR13N20DTRLP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 13A DPAK
Datasheet
IRFR13N20DTRLP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 830pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 235 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 040734-IRFR13N20DTRLP
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRFR13N20DTRLP CAD Model

Description

The Infineon Technologies 040734-IRFR13N20DTRLP is an active N-channel MOSFET that is used in power management applications.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 13A @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 38nC @ 10V
  • Package: D-Pak
  • Maximum Rds On @ Id,Vgs: 235 mOhm @ 8A, 10V

The supply and demand status is balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8731 $52.3860
140+ $0.7164 $100.2960
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,310 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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