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IRFR220NTRPBF

Part No IRFR220NTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 2.9A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017664-IRFR220NTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR220NTRPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor with a maximum power dissipation of 43W and a drain-source breakdown voltage of 200V.

  • Maximum Continuous Drain Current: 5A @ 25°C
  • Maximum Rds On: 600 mOhm @ 2.9A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 23nC @ 10V
  • Maximum Input Capacitance: 300pF @ 25V
  • Package: D-Pak
  • Field of Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2122 $50.9280
505+ $0.1988 $100.3940
785+ $0.1921 $150.7985
1,120+ $0.1786 $200.0320
1,455+ $0.1719 $250.1145
1,820+ $0.1652 $300.6640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,986 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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