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IRFR3410TRPBF

Part No IRFR3410TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 31A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 1690pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 110W (Tc)
Maximum Rds On at Id,Vgs 39 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017673-IRFR3410TRPBF
Family Name IRFR3410
Introduction Date July 07, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR3410TRPBF CAD Model

Description

The Infineon Technologies IRFR3410TRPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 31A at 25°C.

  • Maximum power dissipation: 3W (Ta) and 110W (Tc)
  • Maximum Rds On: 39 mOhm @ 18A and 10V
  • Package: D-Pak package with two leads and a tab
  • Mounting Type: SMD (SMT)
  • Gate-source threshold voltage: 4V @ 250μA
  • Maximum gate charge: 56nC @ 10V
  • Supply and demand status: sufficient
  • Category: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4120 $51.5000
260+ $0.3859 $100.3340
405+ $0.3729 $151.0245
580+ $0.3468 $201.1440
750+ $0.3338 $250.3500
940+ $0.3208 $301.5520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 44,060 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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