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Same model may have multiple batches, images only for reference.
IRFR3411TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3411TRPBF

Part No IRFR3411TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 32A DPAK
Datasheet
IRFR3411TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 1960pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017674-IRFR3411TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3411TRPBF CAD Model

Description

The Infineon Technologies 017674-IRFR3411TRPBF MOSFET is a N-channel device with a Drain-Source Breakdown Voltage of 100V and Continuous Drain Current of 32A.

  • Maximum Rds On: 44 mOhm @ 16A and 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 71nC @ 10V
  • Maximum Input Capacitance: 1960pF @ 25V
  • Package: D-Pak case
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Category: Discrete Semiconductor Products
  • Temperature range: -55°C to 175°C (TJ)
  • Packaging: reel - TR packaging
  • Supply and demand status: balanced

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215+ $0.7017 $150.8655
295+ $0.6790 $200.3050
385+ $0.6564 $252.7140
510+ $0.5885 $300.1350
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Availability: 11,800 pieces
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