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IRFR3412TRPBF

Part No IRFR3412TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 48A DPAK / Trans MOSFET N-CH 100V 48A 3-Pin(2+Tab) DPAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 89nC @ 10V
Max Input Capacitance 3430pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 29A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 205390-IRFR3412TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRFR3412
Introduction Date July 02, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRFR3412TRPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor with a maximum power dissipation of 140W and a drain-source breakdown voltage of 100V.

  • Maximum continuous drain current: 48A @ 25°C
  • Maximum Rds On: 25 mOhm @ 29A and 10V
  • Gate-source threshold voltage: 5.5V @ 250μA
  • Maximum gate charge: 89nC @ 10V
  • Maximum input capacitance: 3430pF @ 25V
  • Package: D-Pak package
  • Category: discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3340 $60.0300
110+ $1.0949 $120.4390
165+ $1.0603 $174.9495
225+ $1.0268 $231.0300
295+ $0.9921 $292.6695
390+ $0.8894 $346.8660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,800 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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