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Same model may have multiple batches, images only for reference.
IRFR3418TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3418TRPBF

Part No IRFR3418TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 70A DPAK
Datasheet
IRFR3418TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 94nC @ 10V
Max Input Capacitance 3510pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 140W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047042-IRFR3418TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3418TRPBF CAD Model

Description

The Infineon Technologies discrete semiconductor product is an IRFR3418TRPBF type MOSFET designed for SMD (SMT) mounting and comes in a D-Pak packaging.

  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 70A (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Max Gate Charge: 94nC @ 10V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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