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Same model may have multiple batches, images only for reference.
IRFR3709ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3709ZPBF

Part No IRFR3709ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 86A DPAK
Datasheet
IRFR3709ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 2330pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 101294-IRFR3709ZPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3709ZPBF CAD Model

Description

The Infineon Technologies IRFR3709ZPBF is a N-channel MOSFET that is part of the Discrete Semiconductor Products category.

  • Maximum Power Dissipation: 79W (Tc)
  • Package: D-Pak
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 86A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 26nC @ 4.5V
  • Maximum Input Capacitance: 2330pF @ 15V
  • Maximum Rds On: 6.5 mOhm @ 15A, 10V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0941 $54.7050
100+ $1.0236 $102.3600
155+ $0.9883 $153.1865
220+ $0.9177 $201.8940
285+ $0.8824 $251.4840
355+ $0.8471 $300.7205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,510 pieces
MOQ: 50 pcs
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