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IRFR3709ZTRPBF

Part No IRFR3709ZTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 86A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 2330pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 001281-IRFR3709ZTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFR3709Z
Introduction Date March 03, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRFR3709ZTRPBF CAD Model

Description

The Infineon Technologies 001281-IRFR3709ZTRPBF is an N-channel MOSFET with a drain-source breakdown voltage of 30V.

  • Continuous Drain Current: 86A @ 25°C
  • Maximum Rds On: 6.5 mOhm @ 15A, 10V
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Max Gate Charge: 26nC @ 4.5V
  • Package: D-Pak
  • Temperature Range: -55°C to 175°C
  • The Infineon Technologies 001281-IRFR3709ZTRPBF is a widely used MOSFET with a high popularity rating and is currently in balance in terms of: supply and demand

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6608 $52.8640
165+ $0.6190 $102.1350
255+ $0.5981 $152.5155
360+ $0.5563 $200.2680
470+ $0.5354 $251.6380
585+ $0.5145 $300.9825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,520 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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