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IRFR3711TRPBF

Part No IRFR3711TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 100A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 2980pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 109818-IRFR3711TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3711TRPBF CAD Model

Description

The Infineon Technologies IRFR3711TRPBF is a N-Channel MOSFET transistor with a power dissipation of 2.5W (Ta) and 120W (Tc).

  • Mounting: Surface-mount device
  • Package: D-Pak case
  • Drive Voltage: 4.5V and 10V
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 100A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 44nC @ 4.5V
  • Maximum Input Capacitance: 2980pF @ 10V
  • Maximum Rds On: 6.5 mOhm @ 15A, 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Availability: in the open market
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,850 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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