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Same model may have multiple batches, images only for reference.
IRFR3910TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3910TRLPBF

Part No IRFR3910TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 16A DPAK
Datasheet
IRFR3910TRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 640pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047065-IRFR3910TRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR3910TRLPBF CAD Model

Description

The Infineon Technologies 1047065-IRFR3910TRLPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 16A (Tc).

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 16A (Tc)
  • Maximum Rds On: 115 mOhm @ 10A @ 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 44nC @ 10V
  • Package: D-Pak

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3538 $51.3010
305+ $0.3314 $101.0770
470+ $0.3202 $150.4940
675+ $0.2978 $201.0150
875+ $0.2866 $250.7750
1,090+ $0.2754 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,350 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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