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IRFR825TRPBF

Part No IRFR825TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1346pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 119W (Tc)
Maximum Rds On at Id,Vgs 1.3 Ohm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1040062-IRFR825TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR825TRPBF CAD Model

Description

The IRFR825TRPBF is a power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. This device is part of Infineon's extensive portfolio of MOSFETs known for their reliability and performance. The IRFR825TRPBF offers a compelling combination of low on-resistance and fast switching speeds, making it suitable for various power management and motor control applications.

Applications:

  • DC-DC converters
  • Power supplies
  • Motor control circuits
  • Load switching
  • LED lighting

Features:

  • Low on-resistance (RDS(on)) to minimize conduction losses.
  • Fast switching speed for improved efficiency.
  • Logic Level, fully avalanche rated
  • Repetitive avalanche rated
  • Available in a D-Pak (TO-252) package for efficient heat dissipation.
  • RoHS compliant

Benefits:

  • Increased energy efficiency due to reduced power dissipation.
  • Improved system performance through faster switching.
  • Simplified thermal management because of low on-resistance and efficient package design.
  • Enhanced system reliability due to robust design and avalanche capability.
  • Environmentally friendly due to RoHS compliance.

Additional Details:

The IRFR825TRPBF features a drain-source voltage (VDS) of 250V and a continuous drain current (ID) of up to 2.9A. The static drain-source on-resistance is typically 1.6 Ohms at VGS = 10V. This MOSFET utilizes advanced process technology to achieve optimal performance and efficiency. The D-Pak package allows for surface mounting and effective heat transfer to the PCB, improving overall thermal performance. Its logic-level gate drive makes it compatible with a wider range of control circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.3309 $51.3163
17+ $6.0151 $102.2567
26+ $5.8271 $151.5046
36+ $5.6391 $203.0076
46+ $5.4512 $250.7552
62+ $4.8873 $303.0126
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,590 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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