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Same model may have multiple batches, images only for reference.
IRFR9N20DTRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR9N20DTRLPBF

Part No IRFR9N20DTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9.4A DPAK
Datasheet
IRFR9N20DTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 560pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 86W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 5.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1047112-IRFR9N20DTRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR9N20DTRLPBF CAD Model

Description

The Infineon Technologies IRFR9N20DTRLPBF is an N-channel MOSFET electronic component that is ideal for various applications.

  • Packaging: Reel - TR
  • Mounting: SMD
  • Maximum Power Dissipation: 86W (Tc)
  • Drive Voltage (max Rds On, min Rds On): 10V
  • Category: Discrete Semiconductor Products
  • Product Status: Active
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 9.4A (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate Charge: 27nC @ 10V
  • Maximum Input Capacitance: 560pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id, Vgs: 380 mOhm @ 5.6A, 10V
  • Supply and Demand Status: Balanced

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