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IRFS23N15DTRLP

Name: IRFS23N15DTRLP
Brand: Infineon Technologies
SKU: 160880
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IRFS23N15DTRLP
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 150V 23A D2PAK
Datasheet	IRFS23N15DTRLP Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	150V
Continuous Drain Current at 25°C	23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	5.5V @ 250μA
Max Gate Charge	56nC @ 10V
Max Input Capacitance	1200pF @ 25V
Maximum Gate-Source Voltage	±30V
Power Dissipation (Max)	3.8W (Ta), 136W (Tc)
Maximum Rds On at Id,Vgs	90 mOhm @ 14A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	D2PAK
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	140786-IRFS23N15DTRLP
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRFS23N15DTRLP CAD Model

Alternative Products

Description

The Infineon Technologies 168060 is an N-Channel MOSFET designed for use in discrete semiconductor applications.

Drain-Source Breakdown Voltage: 150V
Continuous Drain Current: 23A @ 25°C
Package: D2PAK case
Temperature Range: -55°C to 175°C
Maximum Rds On: 90 mOhm @ 14A and 10V

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IRFS23N15DTRLP

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