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IRFS3107TRLPBF

Part No IRFS3107TRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 195A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9370 pF @ 50 V
Power Dissipation (Max) 370W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IRFS3107
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 746311-IRFS3107TRLPBF
Ultra Librarian 3D Model Ultra Librarian IRFS3107TRLPBF CAD Model

Description

The Infineon Technologies IRFS3107TRLPBF is a N-channel MOSFET transistor.

  • Drain to Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 195A @ 25°C
  • On-Resistance (Rds On): 3mOhm @ 140A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Maximum Gate Charge (Qg): 240nC @ 10V
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak
  • Temperature Range: -55°C to 175°C
  • Applications: Power supplies, motor drives, and inverters

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.2517 $52.0272
33+ $3.0420 $100.3860
52+ $2.9371 $152.7292
74+ $2.7273 $201.8202
96+ $2.6224 $251.7504
120+ $2.5175 $302.1000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,870 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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