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Same model may have multiple batches, images only for reference.
IRFS3207ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFS3207ZPBF

Part No IRFS3207ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 120A D2PAK
Datasheet
IRFS3207ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6920pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 4.1 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017708-IRFS3207ZPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control, Communications & Networking
Ultra Librarian 3D Model Ultra Librarian IRFS3207ZPBF CAD Model

Description

The Infineon Technologies IRFS3207ZPBF is an N-channel MOSFET transistor in a D2PAK package.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 120A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id, Vgs: 4.1 mOhm @ 75A and 10V
  • Power Dissipation: 300W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Packaging: tube/rail

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50+ $2.0000 $100.0000
78+ $1.9375 $151.1250
107+ $1.8750 $200.6250
138+ $1.8125 $250.1250
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