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Same model may have multiple batches, images only for reference.
IRFS3307ZTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFS3307ZTRRPBF

Part No IRFS3307ZTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 120A D2PAK / Trans MOSFET N-CH Si 75V 120A 3-Pin(2+Tab) D2PAK T/R
Datasheet
IRFS3307ZTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 75V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 150μA
Gate Charge (Qg) (Maximum) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4750pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 230W (Tc)
Rds On (Maximum) @ Id, Vgs 5.8 mOhm @ 75A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK (TO-263)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 777071-IRFS3307ZTRRPBF
Popularity Medium
Supply and Demand Status Balance
Family Name IRFS3307ZPBF
ECCN EAR99
Country of Origin China
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IRFS3307ZTRRPBF CAD Model

Description

The Infineon Technologies IRFS3307ZTRRPBF is a HEXFET series MOSFET that operates with a drain-source voltage of 75V and delivers up to 120A continuous drain current @ 25°C (Tc).

  • Drain-Source Voltage: 75V
  • Continuous Drain Current @ 25°C (Tc): 120A
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Channel Type: N-channel
  • Drive Voltage: 10V
  • Maximum Gate Voltage: ±20V
  • Temperature Range: -55°C to 175°C (TJ)
  • Compliance: EAR99
  • Estimated EOL Date: 2029

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